NSBC114EPDXV6T5G
onsemi
onsemi
TRANS PREBIAS NPN/PNP 50V SOT563
$0.07
Available to order
Reference Price (USD)
1+
$0.07022
500+
$0.0695178
1000+
$0.0688156
1500+
$0.0681134
2000+
$0.0674112
2500+
$0.066709
Exquisite packaging
Discount
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The NSBC114EPDXV6T5G by onsemi is a cutting-edge pre-biased BJT array designed for high-performance applications. Its unique architecture provides superior current handling and thermal dissipation, making it ideal for power electronics and RF modules. Commonly employed in aerospace, defense, and consumer electronics, this transistor array offers exceptional reliability. onsemi's state-of-the-art production facilities ensure that the NSBC114EPDXV6T5G delivers consistent results under extreme conditions. Engineers trust this product for its precision, durability, and ease of integration into complex systems.
Specifications
- Product Status: Last Time Buy
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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