NSTB1002DXV5T1G
onsemi
onsemi
TRANS PREBIAS 1NPN 1PNP SOT553
$0.10
Available to order
Reference Price (USD)
4,000+
$0.12758
Exquisite packaging
Discount
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The NSTB1002DXV5T1G by onsemi is a cutting-edge pre-biased BJT array designed for high-performance applications. Its unique architecture provides superior current handling and thermal dissipation, making it ideal for power electronics and RF modules. Commonly employed in aerospace, defense, and consumer electronics, this transistor array offers exceptional reliability. onsemi's state-of-the-art production facilities ensure that the NSTB1002DXV5T1G delivers consistent results under extreme conditions. Engineers trust this product for its precision, durability, and ease of integration into complex systems.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 200mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 40V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: SOT-553
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