NTE160
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS PNP 20V 700MHZ TO72
$5.18
Available to order
Reference Price (USD)
1+
$5.18000
500+
$5.1282
1000+
$5.0764
1500+
$5.0246
2000+
$4.9728
2500+
$4.921
Exquisite packaging
Discount
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Upgrade your RF circuits with the NTE160, a high-efficiency Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The NTE160 offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose NTE Electronics, Inc for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 700MHz
- Noise Figure (dB Typ @ f): 5dB @ 800MHz
- Gain: 14dB
- Power - Max: 60mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 10V
- Current - Collector (Ic) (Max): 10mA
- Operating Temperature: 90°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
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