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NTHL060N065SC1

onsemi
NTHL060N065SC1 Preview
onsemi
SIC MOS TO247-3L 650V
$12.50
Available to order
Reference Price (USD)
1+
$12.50000
500+
$12.375
1000+
$12.25
1500+
$12.125
2000+
$12
2500+
$11.875
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
  • Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
  • Vgs (Max): +22V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3

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