PSMN017-30EL,127
NXP Semiconductors
NXP Semiconductors
PSMN017-30EL - N-CHANNEL 30V LO
$0.31
Available to order
Reference Price (USD)
1+
$1.06000
50+
$0.84980
100+
$0.74360
500+
$0.57664
1,000+
$0.45524
Exquisite packaging
Discount
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Optimize your power electronics with the PSMN017-30EL,127 single MOSFET from NXP Semiconductors. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the PSMN017-30EL,127 combines cutting-edge technology with NXP Semiconductors's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 47W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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