R6507END3TL1
Rohm Semiconductor
Rohm Semiconductor
650V 7A TO-252, LOW-NOISE POWER
$2.04
Available to order
Reference Price (USD)
1+
$2.04000
500+
$2.0196
1000+
$1.9992
1500+
$1.9788
2000+
$1.9584
2500+
$1.938
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The R6507END3TL1 from Rohm Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the R6507END3TL1 offers the precision and reliability you need. Trust Rohm Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPD50P04P413ATMA1
Alpha & Omega Semiconductor Inc.
AON6162
Diodes Incorporated
DMN6070SFCL-7
Nexperia USA Inc.
BUK9628-55A,118
onsemi
NTD4813N-35G
Nexperia USA Inc.
BUK7Y153-100EX
Harris Corporation
IRFD113
Infineon Technologies
IPD220N06L3GATMA1
Vishay Siliconix
IRFZ34SPBF
Infineon Technologies