RFG50N05
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$4.82
Available to order
Reference Price (USD)
1+
$4.82000
500+
$4.7718
1000+
$4.7236
1500+
$4.6754
2000+
$4.6272
2500+
$4.579
Exquisite packaging
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Discover the RFG50N05 from Harris Corporation, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the RFG50N05 ensures reliable performance in demanding environments. Upgrade your circuit designs with Harris Corporation's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250nA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 132W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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