RFM3N45
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$0.89
Available to order
Reference Price (USD)
1+
$0.89000
500+
$0.8811
1000+
$0.8722
1500+
$0.8633
2000+
$0.8544
2500+
$0.8455
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the RFM3N45 single MOSFET from Harris Corporation. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RFM3N45 combines cutting-edge technology with Harris Corporation's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3
- Package / Case: TO-204AA, TO-3
Related Products
Infineon Technologies
IPT039N15N5ATMA1
Infineon Technologies
IPDQ60R055CFD7XTMA1
Goford Semiconductor
G30N04D3
Rohm Semiconductor
RSJ301N10TL
STMicroelectronics
SCTWA90N65G2V
Vishay Siliconix
SISS78LDN-T1-GE3
Infineon Technologies
IPN50R1K4CEATMA1
Diodes Incorporated
DMP3028LFDEQ-7
Renesas Electronics America Inc
2SK1567-E
Infineon Technologies