RFP12N18
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$1.06
Available to order
Reference Price (USD)
1+
$1.06000
500+
$1.0494
1000+
$1.0388
1500+
$1.0282
2000+
$1.0176
2500+
$1.007
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RFP12N18 by Harris Corporation is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Harris Corporation for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 180 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Renesas Electronics America Inc
FS5ASJ-06F-T13#B00
Diodes Incorporated
DMT64M1LCG-7
Diodes Incorporated
DMN4020LFDEQ-13
onsemi
NVMYS1D7N04CTWG
Rohm Semiconductor
R6524ENXC7G
Diodes Incorporated
DMT68M8LPS-13
Diodes Incorporated
DMPH1006UPSQ-13
Vishay Siliconix
SIRA90DP-T1-GE3
Vishay Siliconix
SISS76LDN-T1-GE3
Infineon Technologies