RGSX5TS65EGC11
Rohm Semiconductor
Rohm Semiconductor
8S SHORT-CIRCUIT TOLERANCE, 650V
$9.79
Available to order
Reference Price (USD)
1+
$9.79000
500+
$9.6921
1000+
$9.5942
1500+
$9.4963
2000+
$9.3984
2500+
$9.3005
Exquisite packaging
Discount
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Upgrade your power management systems with the RGSX5TS65EGC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RGSX5TS65EGC11 provides reliable and efficient operation. Rohm Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RGSX5TS65EGC11 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 114 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Power - Max: 404 W
- Switching Energy: 3.44mJ (on), 1.9mJ (off)
- Input Type: Standard
- Gate Charge: 79 nC
- Td (on/off) @ 25°C: 43ns/113ns
- Test Condition: 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 116 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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