RGW60TS65DHRC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$6.77
Available to order
Reference Price (USD)
1+
$6.77000
500+
$6.7023
1000+
$6.6346
1500+
$6.5669
2000+
$6.4992
2500+
$6.4315
Exquisite packaging
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Upgrade your power management systems with the RGW60TS65DHRC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RGW60TS65DHRC11 provides reliable and efficient operation. Rohm Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RGW60TS65DHRC11 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 64 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 178 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 84 nC
- Td (on/off) @ 25°C: 36ns/107ns
- Test Condition: 400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): 87 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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