RGWS60TS65GC13
Rohm Semiconductor

Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$4.98
Available to order
Reference Price (USD)
1+
$4.98000
500+
$4.9302
1000+
$4.8804
1500+
$4.8306
2000+
$4.7808
2500+
$4.731
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RGWS60TS65GC13 by Rohm Semiconductor is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the RGWS60TS65GC13 delivers robust performance. Rohm Semiconductor's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate RGWS60TS65GC13 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 51 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 156 W
- Switching Energy: 500µJ (on), 450µJ (off)
- Input Type: Standard
- Gate Charge: 58 nC
- Td (on/off) @ 25°C: 32ns/91ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G