RJH1CV7DPQ-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
RJH1CV7DPQ - IGBT 1200V 70A
$5.54
Available to order
Reference Price (USD)
1+
$5.54000
500+
$5.4846
1000+
$5.4292
1500+
$5.3738
2000+
$5.3184
2500+
$5.263
Exquisite packaging
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The RJH1CV7DPQ-E0#T2 from Renesas Electronics America Inc is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RJH1CV7DPQ-E0#T2 for superior performance in your next power electronics project.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 35A
- Power - Max: 320 W
- Switching Energy: 3.2mJ (on), 2.5mJ (off)
- Input Type: Standard
- Gate Charge: 166 nC
- Td (on/off) @ 25°C: 53ns/185ns
- Test Condition: 600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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