HGTG27N60C3DR
Harris Corporation
Harris Corporation
UFS SERIES N-CHANNEL IGBT
$5.96
Available to order
Reference Price (USD)
1+
$5.96000
500+
$5.9004
1000+
$5.8408
1500+
$5.7812
2000+
$5.7216
2500+
$5.662
Exquisite packaging
Discount
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The HGTG27N60C3DR Single IGBT transistor by Harris Corporation is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the HGTG27N60C3DR provides consistent performance in varied conditions. Rely on Harris Corporation's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 54 A
- Current - Collector Pulsed (Icm): 108 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 27A
- Power - Max: 208 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 212 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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