RJP60D0DPK-01#T0
Renesas
Renesas
RJH60D0 - INSULATED GATE BIPOLAR
$2.07
Available to order
Reference Price (USD)
1+
$2.06958
500+
$2.0488842
1000+
$2.0281884
1500+
$2.0074926
2000+
$1.9867968
2500+
$1.966101
Exquisite packaging
Discount
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Optimize your power systems with the RJP60D0DPK-01#T0 Single IGBT transistor from Renesas. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the RJP60D0DPK-01#T0 delivers consistent and reliable operation. Trust Renesas's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 45 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
- Power - Max: 140 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 45 nC
- Td (on/off) @ 25°C: 35ns/90ns
- Test Condition: 300V, 22A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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