RJH1DF7RDPQ-80#T2
Renesas
Renesas
RJH1DF7 - INSULATED GATE BIPOLAR
$5.17
Available to order
Reference Price (USD)
1+
$5.16879
500+
$5.1171021
1000+
$5.0654142
1500+
$5.0137263
2000+
$4.9620384
2500+
$4.9103505
Exquisite packaging
Discount
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The RJH1DF7RDPQ-80#T2 by Renesas is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Renesas's reputation for quality, the RJH1DF7RDPQ-80#T2 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A
- Power - Max: 250 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 58ns/144ns
- Test Condition: 600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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