RJH65T04BDPM-A0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / IGBT
$5.20
Available to order
Reference Price (USD)
1+
$5.20000
500+
$5.148
1000+
$5.096
1500+
$5.044
2000+
$4.992
2500+
$4.94
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the RJH65T04BDPM-A0#T2 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RJH65T04BDPM-A0#T2 ensures precision and reliability. Renesas Electronics America Inc's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RJH65T04BDPM-A0#T2 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A
- Power - Max: 65 W
- Switching Energy: 360µJ (on), 350µJ (off)
- Input Type: Standard
- Gate Charge: 74 nC
- Td (on/off) @ 25°C: 35ns/125ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-94
- Supplier Device Package: TO-3PFP
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