FZ1800R17HP4_B29
Infineon Technologies
Infineon Technologies
FZ1800R17 - IGBT MODULE
$1,391.03
Available to order
Reference Price (USD)
1+
$1391.03000
500+
$1377.1197
1000+
$1363.2094
1500+
$1349.2991
2000+
$1335.3888
2500+
$1321.4785
Exquisite packaging
Discount
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Optimize your power systems with the FZ1800R17HP4_B29 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FZ1800R17HP4_B29 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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