IXYP24N100A4
IXYS
IXYS
IGBT DISCRETE TO-220
$14.21
Available to order
Reference Price (USD)
1+
$14.21440
500+
$14.072256
1000+
$13.930112
1500+
$13.787968
2000+
$13.645824
2500+
$13.50368
Exquisite packaging
Discount
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Discover the IXYP24N100A4 Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXYP24N100A4 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXYP24N100A4 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 145 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
- Power - Max: 375 W
- Switching Energy: 3.5mJ (on), 2.3mJ (off)
- Input Type: Standard
- Gate Charge: 44 nC
- Td (on/off) @ 25°C: 13ns/216ns
- Test Condition: 800V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr): 47 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220 (IXYP)
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