IXXH30N65B4D1
IXYS
IXYS
IGBT
$5.28
Available to order
Reference Price (USD)
30+
$5.19767
Exquisite packaging
Discount
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Upgrade your power management systems with the IXXH30N65B4D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXXH30N65B4D1 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXXH30N65B4D1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 146 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 230 W
- Switching Energy: 1.04mJ (on), 730µJ (off)
- Input Type: Standard
- Gate Charge: 52 nC
- Td (on/off) @ 25°C: 20ns/150ns
- Test Condition: 400V, 30A, 15Ohm, 15V
- Reverse Recovery Time (trr): 65 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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