RJP4301APP-M0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 430V TO200FL
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience top-tier performance with the RJP4301APP-M0#T2 Single IGBT transistor from Renesas Electronics America Inc. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the RJP4301APP-M0#T2 ensures energy efficiency and reliability. Trust Renesas Electronics America Inc's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 430 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 10V @ 26V, 200A
- Power - Max: 30 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 50ns/100ns
- Test Condition: 300V, 200A, 30Ohm, 26V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FL
Related Products
Infineon Technologies
IRGP6630DPBF
onsemi
FGB30N6S2DT
IXYS
IXGT32N60C
STMicroelectronics
STGWS38IH130D
onsemi
HGTG30N60B3D
Microsemi Corporation
APT44GA60BD30C
onsemi
SGS6N60UFTU
IXYS
IXGX72N60A3H1
onsemi
NGTB40N120FLWG
IXYS