RJP63G4DPE-00#J3
Renesas Electronics America Inc
Renesas Electronics America Inc
N CH IGBT
$2.61
Available to order
Reference Price (USD)
1+
$2.61000
500+
$2.5839
1000+
$2.5578
1500+
$2.5317
2000+
$2.5056
2500+
$2.4795
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RJP63G4DPE-00#J3 Single IGBT transistor by Renesas Electronics America Inc is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the RJP63G4DPE-00#J3 provides consistent performance in varied conditions. Rely on Renesas Electronics America Inc's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Infineon Technologies
FP150R07N3E4
Harris Corporation
IGT6D20
Toshiba Semiconductor and Storage
GT40WR21,Q
Harris Corporation
HGTG20N50C1D
Renesas
RJH1BF7RDPQ-80#T2
Toshiba Semiconductor and Storage
GT50J341,Q
Harris Corporation
HGTA32N60E2
Harris Corporation
HGTH12N50C1D
Renesas Electronics America Inc
RJP43F4ADPP-90#T2F
Renesas Electronics America Inc