RN1708JE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
$0.41
Available to order
Reference Price (USD)
1+
$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
Exquisite packaging
Discount
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Upgrade your electronic designs with the RN1708JE(TE85L,F) by Toshiba Semiconductor and Storage, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the RN1708JE(TE85L,F) excels in automotive systems, power management modules, and communication devices. Toshiba Semiconductor and Storage's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose RN1708JE(TE85L,F) for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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