EMD52T2R
Rohm Semiconductor
Rohm Semiconductor
PNP+NPN DIGITAL TRANSISTOR (WITH
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with Rohm Semiconductor's EMD52T2R, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The EMD52T2R is widely used in lighting systems, portable electronics, and automotive accessories. Rohm Semiconductor's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the EMD52T2R is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
Related Products
onsemi
NSBC114EPDXV6T5G
Rohm Semiconductor
IMD2AT108
Rohm Semiconductor
FMA1AT148
onsemi
NSVMUN5133DW1T1G
Rohm Semiconductor
UMA2NTR
onsemi
NSVMUN5316DW1T1G
Rohm Semiconductor
EMH10T2R
Diodes Incorporated
DCX115EK-7-F
onsemi
MUN5235DW1T1
Toshiba Semiconductor and Storage