RSS100N03HZGTB
Rohm Semiconductor
Rohm Semiconductor
NCH 30V 10A AUTOMOTIVE POWER MOS
$1.65
Available to order
Reference Price (USD)
1+
$1.65000
500+
$1.6335
1000+
$1.617
1500+
$1.6005
2000+
$1.584
2500+
$1.5675
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RSS100N03HZGTB by Rohm Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the RSS100N03HZGTB is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Diodes Incorporated
DMN2055UW-7
Alpha & Omega Semiconductor Inc.
AONR62921
Nexperia USA Inc.
PSMNR90-50SLHAX
Diodes Incorporated
DMN3061SW-7
Diodes Incorporated
DMT34M1LPS-13
Harris Corporation
RFM12P08
Diodes Incorporated
DMN2310UFD-7
Renesas
RJK6012DPP-E0#T2
NXP USA Inc.
NX2020P1115
onsemi