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RUM002N05T2L

Rohm Semiconductor
RUM002N05T2L Preview
Rohm Semiconductor
MOSFET N-CH 50V 200MA VMT3
$0.44
Available to order
Reference Price (USD)
8,000+
$0.05760
16,000+
$0.05120
24,000+
$0.04800
56,000+
$0.04480
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723

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