SCT4062KRC15
Rohm Semiconductor
Rohm Semiconductor
1200V, 62M, 4-PIN THD, TRENCH-ST
$15.82
Available to order
Reference Price (USD)
1+
$15.82000
500+
$15.6618
1000+
$15.5036
1500+
$15.3454
2000+
$15.1872
2500+
$15.029
Exquisite packaging
Discount
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Upgrade your designs with the SCT4062KRC15 by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SCT4062KRC15 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
- Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
- Vgs (Max): +21V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 115W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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