IXFN280N07
IXYS
IXYS
MOSFET N-CH 70V 280A SOT-227B
$24.30
Available to order
Reference Price (USD)
10+
$23.82800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXFN280N07 by IXYS is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose IXYS for innovation you can depend on.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 70 V
- Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 120A, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
onsemi
NTTFS1D8N02P1E
Fairchild Semiconductor
FDS4488
Microchip Technology
APT58F50J
Infineon Technologies
IPI100N06S3L04XK
IXYS
IXTP08N100P
Infineon Technologies
IPP65R099CFD7AAKSA1
Renesas Electronics America Inc
2SK3484-AZ
onsemi
FQP2N90
Toshiba Semiconductor and Storage
TK1K2A60F,S4X
Infineon Technologies