SQJ412EP-T2_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 32A PPAK SO-8
$0.83
Available to order
Reference Price (USD)
1+
$0.82764
500+
$0.8193636
1000+
$0.8110872
1500+
$0.8028108
2000+
$0.7945344
2500+
$0.786258
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQJ412EP-T2_GE3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Infineon Technologies
IPB026N10NF2SATMA1
Renesas
RJK5013DPP-E0#T2
Rohm Semiconductor
R6009KNXC7G
Infineon Technologies
IMBG65R107M1HXTMA1
Harris Corporation
IRF9542
Renesas
RQA0008RXDQS#H1
Alpha & Omega Semiconductor Inc.
AONS36303
onsemi
TF252TH-5-TL-H
Diodes Incorporated
DMT10H9M9SSS-13
Diodes Incorporated