STGH30H65DFB-2AG
STMicroelectronics
STMicroelectronics
AUTOMOTIVE-GRADE TRENCH GATE FIE
$3.81
Available to order
Reference Price (USD)
1+
$3.81000
500+
$3.7719
1000+
$3.7338
1500+
$3.6957
2000+
$3.6576
2500+
$3.6195
Exquisite packaging
Discount
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Upgrade your power management systems with the STGH30H65DFB-2AG Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the STGH30H65DFB-2AG provides reliable and efficient operation. STMicroelectronics's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose STGH30H65DFB-2AG for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 260 W
- Switching Energy: 555µJ (on), 300µJ (off)
- Input Type: Standard
- Gate Charge: 155 nC
- Td (on/off) @ 25°C: 24ns/170ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 28 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: H2Pak-2
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