STGWA50M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
$5.53
Available to order
Reference Price (USD)
1+
$4.12000
10+
$3.69900
100+
$3.03030
600+
$2.57963
1,200+
$2.17560
3,000+
$2.07200
Exquisite packaging
Discount
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Experience top-tier performance with the STGWA50M65DF2 Single IGBT transistor from STMicroelectronics. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the STGWA50M65DF2 ensures energy efficiency and reliability. Trust STMicroelectronics's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 375 W
- Switching Energy: 880µJ (on), 1.57mJ (off)
- Input Type: Standard
- Gate Charge: 150 nC
- Td (on/off) @ 25°C: 42ns/130ns
- Test Condition: 400V, 50A, 6.8Ohm, 15V
- Reverse Recovery Time (trr): 162 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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