TPH3212PS
Transphorm
Transphorm
GANFET N-CH 650V 27A TO220AB
$13.31
Available to order
Reference Price (USD)
1+
$13.95000
10+
$12.68000
50+
$11.72900
100+
$10.77800
250+
$9.82700
500+
$9.19300
1,000+
$8.87600
Exquisite packaging
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Discover the TPH3212PS from Transphorm, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the TPH3212PS ensures reliable performance in demanding environments. Upgrade your circuit designs with Transphorm's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 72mOhm @ 17A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 400uA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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