VS-ENQ030L120S
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 61A EMIPAK-1B
$0.00
Available to order
Reference Price (USD)
1+
$117.94000
10+
$112.36300
25+
$109.97280
Exquisite packaging
Discount
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Vishay General Semiconductor - Diodes Division's VS-ENQ030L120S sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the VS-ENQ030L120S in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Vishay General Semiconductor - Diodes Division to deliver cutting-edge IGBT solutions with the VS-ENQ030L120S power module.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 61 A
- Power - Max: 216 W
- Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 30A
- Current - Collector Cutoff (Max): 230 µA
- Input Capacitance (Cies) @ Vce: 3.34 nF @ 30 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: EMIPAK-1B
- Supplier Device Package: EMIPAK-1B
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