VS-GA200SA60SP
Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 781W SOT227
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Experience next-generation power control with Vishay General Semiconductor - Diodes Division's VS-GA200SA60SP IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The VS-GA200SA60SP offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the VS-GA200SA60SP in your next-generation HVDC systems or particle accelerator power supplies. Vishay General Semiconductor - Diodes Division delivers reliability where it matters most with the VS-GA200SA60SP IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): -
- Power - Max: 781 W
- Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227