VS-GB15XP120KTPBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 1200V 30A 187W MTP
$0.00
Available to order
Reference Price (USD)
105+
$46.50943
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay General Semiconductor - Diodes Division's VS-GB15XP120KTPBF sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the VS-GB15XP120KTPBF in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Vishay General Semiconductor - Diodes Division to deliver cutting-edge IGBT solutions with the VS-GB15XP120KTPBF power module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Power - Max: 187 W
- Vce(on) (Max) @ Vge, Ic: 3.66V @ 15V, 30A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 1.95 nF @ 30 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 12-MTP Module
- Supplier Device Package: MTP
Related Products
Infineon Technologies
IRG5K300HF06B
onsemi
SNXH80T120L2Q0P2G
IXYS
VID75-06P1
Microsemi Corporation
APTGT200A60TG
Microsemi Corporation
APTGV75H60T3G
Microchip Technology
CMTDGF50H603G
Microsemi Corporation
APTGT150H170G
Vishay General Semiconductor - Diodes Division
VS-EMG050J60N
onsemi
HGT1N40N60A4D
Powerex Inc.