ZXMN3B04N8TA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 7.2A 8SO
$1.26
Available to order
Reference Price (USD)
1+
$1.26000
500+
$1.2474
1000+
$1.2348
1500+
$1.2222
2000+
$1.2096
2500+
$1.197
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the ZXMN3B04N8TA from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the ZXMN3B04N8TA ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
TN2404K-T1-GE3
Infineon Technologies
IRF3805PBF
IXYS
IXFK26N100P
onsemi
NTJS3157NT1G
Renesas Electronics America Inc
UPA2734GR-E2-AT
Nexperia USA Inc.
PMH550UNEH
Diodes Incorporated
DMN63D8LW-7
Vishay Siliconix
SI4497DY-T1-GE3
Vishay Siliconix
IRFP460LCPBF
Infineon Technologies