6MS24017E33W32859NOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 9980W STACK A-MS3-1
$0.00
Available to order
Reference Price (USD)
1+
$21,488.77000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's 6MS24017E33W32859NOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The 6MS24017E33W32859NOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the 6MS24017E33W32859NOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the 6MS24017E33W32859NOSA1 IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: 9980 W
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -25°C ~ 55°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microsemi Corporation
APTGF150DA120TG
Vishay General Semiconductor - Diodes Division
VS-GA100NA60UP
Vishay General Semiconductor - Diodes Division
CPV364M4U
Infineon Technologies
6MS24017E33W32274NOSA1
IXYS
IXSN80N60BD1
Microchip Technology
APT60GT60JRDQ3
Infineon Technologies
6MS24017E33W32860NOSA1
Infineon Technologies
DDB6U180N16RRB37BOSA1
Microsemi Corporation
APTGF300A120D3G
Littelfuse Inc.