A1P25S12M3-F
STMicroelectronics
STMicroelectronics
IGBT MOD 1200V 25A 197W ACEPACK1
$50.28
Available to order
Reference Price (USD)
1+
$39.52000
36+
$34.80750
108+
$31.12204
Exquisite packaging
Discount
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The A1P25S12M3-F by STMicroelectronics redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the A1P25S12M3-F in high-efficiency servo controllers for manufacturing automation. STMicroelectronics combines innovation with quality in every A1P25S12M3-F module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 25 A
- Power - Max: 197 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 25A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 1.55 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ACEPACK™ 1
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