APTGF100A1202G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 135A 568W SP2
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Microsemi Corporation's APTGF100A1202G stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the APTGF100A1202G enables higher power density in MRI gradient amplifiers. Choose Microsemi Corporation for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 135 A
- Power - Max: 568 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP2
- Supplier Device Package: SP2
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