APTGF100A120T3WG
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 130A 657W SP3
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Engineered for excellence, the APTGF100A120T3WG IGBT module by Microsemi Corporation sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The APTGF100A120T3WG finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Microsemi Corporation continues to lead the IGBT module revolution with innovations like the APTGF100A120T3WG.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 130 A
- Power - Max: 657 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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