APTGT200A602G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 600V 290A 625W SP2
$0.00
Available to order
Reference Price (USD)
100+
$48.70270
Exquisite packaging
Discount
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Optimize your power systems with Microsemi Corporation's APTGT200A602G, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The APTGT200A602G is particularly effective in high-ambient-temperature environments like steel mill drives. Microsemi Corporation brings decades of semiconductor expertise to every APTGT200A602G module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 290 A
- Power - Max: 625 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP2
- Supplier Device Package: SP2
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