BLF6G20-180PN112
NXP USA Inc.
NXP USA Inc.
RF POWER TRANSISTORS
$99.84
Available to order
Reference Price (USD)
1+
$99.84000
500+
$98.8416
1000+
$97.8432
1500+
$96.8448
2000+
$95.8464
2500+
$94.848
Exquisite packaging
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The BLF6G20-180PN112 from NXP USA Inc. is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the Discrete Semiconductor Products category. This transistor excels in radio frequency (RF) amplification, offering exceptional gain and low noise characteristics. With its robust construction and reliable performance, the BLF6G20-180PN112 is ideal for use in communication systems, RF modules, and signal processing circuits. Key features include high transition frequency, excellent thermal stability, and low distortion, making it a top choice for engineers and designers. Applications include wireless communication devices, radar systems, and RF transceivers. Trust NXP USA Inc. for superior quality and innovation in RF BJT technology.
Specifications
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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