F3L200R07PE4
Infineon Technologies
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTO
$152.09
Available to order
Reference Price (USD)
1+
$152.09000
500+
$150.5691
1000+
$149.0482
1500+
$147.5273
2000+
$146.0064
2500+
$144.4855
Exquisite packaging
Discount
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The F3L200R07PE4 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The F3L200R07PE4 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate F3L200R07PE4 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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