FGA40S65SH
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$0.00
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Reference Price (USD)
450+
$2.67456
Exquisite packaging
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Upgrade your power management systems with the FGA40S65SH Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the FGA40S65SH provides reliable and efficient operation. Fairchild Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose FGA40S65SH for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
- Power - Max: 268 W
- Switching Energy: 194µJ (on), 388µJ (off)
- Input Type: Standard
- Gate Charge: 73 nC
- Td (on/off) @ 25°C: 19.2ns/68.8ns
- Test Condition: 400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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