FGAF40N60SMD
onsemi

onsemi
IGBT FIELD STOP 600V 80A TO3PF
$5.26
Available to order
Reference Price (USD)
1+
$4.84000
10+
$4.34800
360+
$3.37994
720+
$3.03282
1,080+
$2.55780
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FGAF40N60SMD Single IGBT transistor by onsemi is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The FGAF40N60SMD ensures precise power control and long-term stability. With onsemi's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate FGAF40N60SMD into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 115 W
- Switching Energy: 870µJ (on), 260µJ (off)
- Input Type: Standard
- Gate Charge: 119 nC
- Td (on/off) @ 25°C: 12ns/92ns
- Test Condition: 400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr): 36 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PF