STGWA40H65DFB2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP 650 V 40
$4.12
Available to order
Reference Price (USD)
1+
$4.12000
500+
$4.0788
1000+
$4.0376
1500+
$3.9964
2000+
$3.9552
2500+
$3.914
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience top-tier performance with the STGWA40H65DFB2 Single IGBT transistor from STMicroelectronics. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the STGWA40H65DFB2 ensures energy efficiency and reliability. Trust STMicroelectronics's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 72 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 230 W
- Switching Energy: 765µJ (on), 410µJ (off)
- Input Type: Standard
- Gate Charge: 153 nC
- Td (on/off) @ 25°C: 18ns/72ns
- Test Condition: 400V, 40A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 75 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
Related Products
Microchip Technology
APT75GP120B2G
Diodes Incorporated
DGTD65T15H2TF
Alpha & Omega Semiconductor Inc.
AOKS40B65H1
Harris Corporation
HGTP7N60C3D
Fairchild Semiconductor
73389
IXYS
IXYH40N120A4
Rohm Semiconductor
RGTH00TS65DGC11
Rohm Semiconductor
RGS80TSX2DHRC11
onsemi
ISL9V2040D3STV
IXYS