APT80GA90S
Microchip Technology

Microchip Technology
IGBT PT MOS 8 SINGLE 900 V 80 A
$11.94
Available to order
Reference Price (USD)
1+
$11.94000
500+
$11.8206
1000+
$11.7012
1500+
$11.5818
2000+
$11.4624
2500+
$11.343
Exquisite packaging
Discount
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Enhance your electronic projects with the APT80GA90S Single IGBT transistor from Microchip Technology. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the APT80GA90S ensures precision and reliability. Microchip Technology's cutting-edge technology guarantees a component that meets the highest industry standards. Choose APT80GA90S for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Current - Collector (Ic) (Max): 145 A
- Current - Collector Pulsed (Icm): 239 A
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
- Power - Max: 625 W
- Switching Energy: 1.625mJ (on), 1.389mJ (off)
- Input Type: Standard
- Gate Charge: 200 nC
- Td (on/off) @ 25°C: 18ns/149ns
- Test Condition: 600V, 47A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: D3PAK