FGB20N60SFD
onsemi
onsemi
IGBT 600V 40A 208W D2PAK
$0.00
Available to order
Reference Price (USD)
800+
$2.42818
1,600+
$2.06653
2,400+
$1.97380
Exquisite packaging
Discount
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Upgrade your power management systems with the FGB20N60SFD Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the FGB20N60SFD provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose FGB20N60SFD for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
- Power - Max: 208 W
- Switching Energy: 370µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 65 nC
- Td (on/off) @ 25°C: 13ns/90ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 34 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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