FPF1C2P5MF07AM
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$0.00
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Reference Price (USD)
110+
$56.17000
Exquisite packaging
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Fairchild Semiconductor's FPF1C2P5MF07AM stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FPF1C2P5MF07AM enables higher power density in MRI gradient amplifiers. Choose Fairchild Semiconductor for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 620 V
- Current - Collector (Ic) (Max): 39 A
- Power - Max: 231 W
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
- Current - Collector Cutoff (Max): 25 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Single Phase Bridge Rectifier
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: F1 Module
- Supplier Device Package: F1
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