RGWX5TS65HRC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$8.56
Available to order
Reference Price (USD)
1+
$8.56000
500+
$8.4744
1000+
$8.3888
1500+
$8.3032
2000+
$8.2176
2500+
$8.132
Exquisite packaging
Discount
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Optimize your power systems with the RGWX5TS65HRC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the RGWX5TS65HRC11 delivers consistent and reliable operation. Trust Rohm Semiconductor's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 132 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
- Power - Max: 348 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 213 nC
- Td (on/off) @ 25°C: 62ns/237ns
- Test Condition: 400V, 37.5A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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